A kilobyte rewritable atomic memory

F. E. Kalff*, M.P. Rebergen, E. Fahrenfort, J. Girovsky, R. Toskovic, J.L. Lado, J. Fernández-Rossier, A. F. Otte

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

111 Citations (Scopus)

Abstract

The advent of devices based on single dopants, such as the single-atom transistor, the single-spin magnetometer and the single-atom memory, has motivated the quest for strategies that permit the control of matter with atomic precision. Manipulation of individual atoms by low-temperature scanning tunnelling microscopy provides ways to store data in atoms, encoded either into their charge state, magnetization state or lattice position. A clear challenge now is the controlled integration of these individual functional atoms into extended, scalable atomic circuits. Here, we present a robust digital atomic-scale memory of up to 1 kilobyte (8,000 bits) using an array of individual surface vacancies in a chlorine-terminated Cu(100) surface. The memory can be read and rewritten automatically by means of atomic-scale markers and offers an areal density of 502 terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude. Furthermore, the chlorine vacancies are found to be stable at temperatures up to 77 K, offering the potential for expanding large-scale atomic assembly towards ambient conditions.

Original languageEnglish
Pages (from-to)926-930
JournalNature Nanotechnology
Volume11
DOIs
Publication statusPublished - 2016

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