TY - JOUR
T1 - A kilobyte rewritable atomic memory
AU - Kalff, F. E.
AU - Rebergen, M.P.
AU - Fahrenfort, E.
AU - Girovsky, J.
AU - Toskovic, R.
AU - Lado, J.L.
AU - Fernández-Rossier, J.
AU - Otte, A. F.
PY - 2016
Y1 - 2016
N2 - The advent of devices based on single dopants, such as the single-atom transistor, the single-spin magnetometer and the single-atom memory, has motivated the quest for strategies that permit the control of matter with atomic precision. Manipulation of individual atoms by low-temperature scanning tunnelling microscopy provides ways to store data in atoms, encoded either into their charge state, magnetization state or lattice position. A clear challenge now is the controlled integration of these individual functional atoms into extended, scalable atomic circuits. Here, we present a robust digital atomic-scale memory of up to 1 kilobyte (8,000 bits) using an array of individual surface vacancies in a chlorine-terminated Cu(100) surface. The memory can be read and rewritten automatically by means of atomic-scale markers and offers an areal density of 502 terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude. Furthermore, the chlorine vacancies are found to be stable at temperatures up to 77 K, offering the potential for expanding large-scale atomic assembly towards ambient conditions.
AB - The advent of devices based on single dopants, such as the single-atom transistor, the single-spin magnetometer and the single-atom memory, has motivated the quest for strategies that permit the control of matter with atomic precision. Manipulation of individual atoms by low-temperature scanning tunnelling microscopy provides ways to store data in atoms, encoded either into their charge state, magnetization state or lattice position. A clear challenge now is the controlled integration of these individual functional atoms into extended, scalable atomic circuits. Here, we present a robust digital atomic-scale memory of up to 1 kilobyte (8,000 bits) using an array of individual surface vacancies in a chlorine-terminated Cu(100) surface. The memory can be read and rewritten automatically by means of atomic-scale markers and offers an areal density of 502 terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude. Furthermore, the chlorine vacancies are found to be stable at temperatures up to 77 K, offering the potential for expanding large-scale atomic assembly towards ambient conditions.
UR - http://www.scopus.com/inward/record.url?scp=84978695676&partnerID=8YFLogxK
U2 - 10.1038/nnano.2016.131
DO - 10.1038/nnano.2016.131
M3 - Article
AN - SCOPUS:84978695676
SN - 1748-3387
VL - 11
SP - 926
EP - 930
JO - Nature Nanotechnology
JF - Nature Nanotechnology
ER -