Abstract
A linearization technique for bipolar amplifiers based on Derivative
Superposition is presented. The proposed technique provides excellent
linearity, while having low sensitivity on the bias conditions. A
demonstrator circuit, along with a reference circuit using out-of-band
linearization for linearity comparison, have been designed and
implemented in a 0:25μm SiGe:C BiCMOS technology to show the
effectiveness of the proposed approach. Measured results show a
significant IM3 improvement up to compression compared to the reference
circuit.
Original language | English |
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Title of host publication | Proceedings - 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017 |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 13 - 16 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-5090-6383-3 |
ISBN (Print) | 978-1-5090-6382-6 |
DOIs | |
Publication status | Published - 2017 |
Event | 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017 - Miami, FL, United States Duration: 19 Oct 2017 → 21 Oct 2017 |
Conference
Conference | 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017 |
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Country/Territory | United States |
City | Miami, FL |
Period | 19/10/17 → 21/10/17 |
Keywords
- Intermodulation distortion
- power amplifiers
- linearity
- bipolar transistors