A low-cost pulsed RF & I-V measurement setup for isothermal device characterization

M. Marchetti, K. Buisman, M. Pelk, L. C.N. De Vreede

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

A low-cost, highly versatile, pulsed RF - pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.

Original languageEnglish
Title of host publication2007 70th ARFTG Microwave Measurement Conference
Subtitle of host publicationHigh Power RF Measurement Techniques, ARFTG 2007
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages33-36
Number of pages4
ISBN (Electronic)978-1-5386-7295-2
ISBN (Print)978-1-5386-7296-9
DOIs
Publication statusPublished - 2007
Event70th ARFTG Microwave Measurement Conference, ARFTG 2007 - Tempe, United States
Duration: 29 Nov 200730 Nov 2007

Conference

Conference70th ARFTG Microwave Measurement Conference, ARFTG 2007
CountryUnited States
CityTempe
Period29/11/0730/11/07

Keywords

  • Device characterization
  • Dynamic range
  • Isothermal
  • Pulsed measurements

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