A new extraction technique for the series resistance of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters

V Cuoco; WCE Neo; LCN de Vreede; HC de Graaff; LK Nanver; HC Wu; HFF Jos; JN Burghartz

A new extraction technique for the series resistance of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters

V Cuoco, WCE Neo, LCN de Vreede, HC de Graaff, LK Nanver, HC Wu, HFF Jos, JN Burghartz

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proceedings Bipolar/BiCMOS Circuits and Technology Meeting 2004
Place of Publication	Piscataway
Publisher	IEEE Society
Pages	148-151
Number of pages	4
ISBN (Print)	0-7803-8618-3
Publication status	Published - 2004
Event	Bipolar/BiCMOS Circuits and Technology Meeting 2004, Montreal, Canada - Piscataway Duration: 12 Sept 2004 → 14 Sept 2004

Publication series

Name
Publisher	IEEE

Conference

Conference	Bipolar/BiCMOS Circuits and Technology Meeting 2004, Montreal, Canada
Period	12/09/04 → 14/09/04

Bibliographical note

delen ECTM/HiTeC??/ ed. is niet bekend

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{a2544b0d46f841639eb2f5f6d11aaeac,

title = "A new extraction technique for the series resistance of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "V Cuoco and WCE Neo and {de Vreede}, LCN and {de Graaff}, HC and LK Nanver and HC Wu and HFF Jos and JN Burghartz",

note = "delen ECTM/HiTeC??/ ed. is niet bekend; Bipolar/BiCMOS Circuits and Technology Meeting 2004, Montreal, Canada ; Conference date: 12-09-2004 Through 14-09-2004",

year = "2004",

language = "Undefined/Unknown",

isbn = "0-7803-8618-3",

publisher = "IEEE Society",

pages = "148--151",

booktitle = "Proceedings Bipolar/BiCMOS Circuits and Technology Meeting 2004",

}

Cuoco, V, Neo, WCE, de Vreede, LCN, de Graaff, HC, Nanver, LK, Wu, HC, Jos, HFF & Burghartz, JN 2004, A new extraction technique for the series resistance of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters. in Proceedings Bipolar/BiCMOS Circuits and Technology Meeting 2004. IEEE Society, Piscataway, pp. 148-151, Bipolar/BiCMOS Circuits and Technology Meeting 2004, Montreal, Canada, 12/09/04.

A new extraction technique for the series resistance of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters. / Cuoco, V; Neo, WCE; de Vreede, LCN et al.
Proceedings Bipolar/BiCMOS Circuits and Technology Meeting 2004. Piscataway: IEEE Society, 2004. p. 148-151.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A new extraction technique for the series resistance of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters

AU - Cuoco, V

AU - Neo, WCE

AU - de Vreede, LCN

AU - de Graaff, HC

AU - Nanver, LK

AU - Wu, HC

AU - Jos, HFF

AU - Burghartz, JN

N1 - delen ECTM/HiTeC??/ ed. is niet bekend

PY - 2004

Y1 - 2004

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

UR - http://hitec.ewi.tudelft.nl/data/artwork/publication/956813992.pdf

M3 - Conference contribution

SN - 0-7803-8618-3

SP - 148

EP - 151

BT - Proceedings Bipolar/BiCMOS Circuits and Technology Meeting 2004

PB - IEEE Society

CY - Piscataway

T2 - Bipolar/BiCMOS Circuits and Technology Meeting 2004, Montreal, Canada

Y2 - 12 September 2004 through 14 September 2004

ER -

A new extraction technique for the series resistance of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters

Publication series

Conference

Bibliographical note

Keywords

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Cite this