A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

F. B. Wiggers, V.H. Bui, R. Friedlein, Y. Yamada-Takamura, J. Schmitz, A. Y. Kovalgin, M. P. De Jong

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
34 Downloads (Pure)

Abstract

We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 °C leads to surface nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.

Original languageEnglish
Article number134703
Pages (from-to)1-5
Number of pages6
JournalJournal of Chemical Physics
Volume144
Issue number13
DOIs
Publication statusPublished - 7 Apr 2016

Keywords

  • Epitaxy
  • Photons
  • Semiconductor surfaces
  • Insulator surfaces
  • Nitridation

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