A Novel Defect Diagnosis Method for Kyropoulos Process Based Sapphire Growth

Wei Zhang, Tiezhu Qiao, Yusong Pang, Yi Yang, Hong Chen, Guirong Hao

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Abstract

When sapphire crystal is prepared with Kyropoulos method, the necking-down growth process is a key stage. Sapphire growth defect is a big problem in this stage. However, diagnosing growth defects is subject to the interference of workers subjectivity and accuracy always goes down. To address the problem, a novel defect diagnosis method is proposed for necking-down growth process in this paper. Industrial CCD sensors replace eyes of skilled workers to observe in this method. A new Defect-Diagnosing Siamese network (DDSN) is used in this method. We use Siamese architecture to learn similarity through pairs of images. We use the deep separable convolution (DSC) into the DDSN to optimize running speed and model size. In experiment, dataset is acquired by industrial CCD sensors in the necking-down growth process. The accuracy of defect diagnosis can reach up to 94.5%. The method significantly improves the traditional way.
Original languageEnglish
Pages (from-to)5435-5441
JournalIEEE Sensors Journal
Volume20
Issue number10
DOIs
Publication statusPublished - 2020

Keywords

  • CCD sensor
  • Defect-Diagnosing Siamese network
  • Necking-down process
  • Sapphire Growth Defects

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