Abstract
A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under Eoff of 8mJ/cm2, the VCE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.
Original language | English |
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Title of host publication | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
Publisher | IEEE |
Pages | 410-412 |
Number of pages | 3 |
ISBN (Electronic) | 978-1-5386-6508-4 |
ISBN (Print) | 978-1-5386-6509-1 |
DOIs | |
Publication status | Published - 1 Mar 2019 |
Event | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019 |
Conference
Conference | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
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Country/Territory | Singapore |
City | Singapore |
Period | 12/03/19 → 15/03/19 |
Keywords
- EMI noise
- hole path
- IGBT
- on-state voltage
- partial carrier layer
- turn-off loss