A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

R Ishihara; A Glazer; Y Raab; P Rusian; M Dorfan; B Lavi; I Leizerson; A Kishinevsky; Y van Andel; X Cao; JW Metselaar; CIM Beenakker; S Stolyarova; Y Nemirovsky

A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

R Ishihara, A Glazer, Y Raab, P Rusian, M Dorfan, B Lavi, I Leizerson, A Kishinevsky, Y van Andel, X Cao, JW Metselaar, CIM Beenakker, S Stolyarova, Y Nemirovsky

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	136-140
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E89-C
Issue number	10
Publication status	Published - 2006

Keywords

academic journal papers
CWTS JFIS < 0.75

Cite this

Ishihara, R., Glazer, A., Raab, Y., Rusian, P., Dorfan, M., Lavi, B., Leizerson, I., Kishinevsky, A., van Andel, Y., Cao, X., Metselaar, JW., Beenakker, CIM., Stolyarova, S., & Nemirovsky, Y. (2006). A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors. IEICE Transactions on Electronics, E89-C(10), 136-140.

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title = "A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors",

keywords = "academic journal papers, CWTS JFIS < 0.75",

author = "R Ishihara and A Glazer and Y Raab and P Rusian and M Dorfan and B Lavi and I Leizerson and A Kishinevsky and \{van Andel\}, Y and X Cao and JW Metselaar and CIM Beenakker and S Stolyarova and Y Nemirovsky",

year = "2006",

language = "Undefined/Unknown",

volume = "E89-C",

pages = "136--140",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "10",

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Ishihara, R, Glazer, A, Raab, Y, Rusian, P, Dorfan, M, Lavi, B, Leizerson, I, Kishinevsky, A, van Andel, Y, Cao, X, Metselaar, JW, Beenakker, CIM, Stolyarova, S & Nemirovsky, Y 2006, 'A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors', IEICE Transactions on Electronics, vol. E89-C, no. 10, pp. 136-140.

TY - JOUR

T1 - A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

AU - Ishihara, R

AU - Glazer, A

AU - Raab, Y

AU - Rusian, P

AU - Dorfan, M

AU - Lavi, B

AU - Leizerson, I

AU - Kishinevsky, A

AU - van Andel, Y

AU - Cao, X

AU - Metselaar, JW

AU - Beenakker, CIM

AU - Stolyarova, S

AU - Nemirovsky, Y

PY - 2006

Y1 - 2006

KW - academic journal papers

KW - CWTS JFIS < 0.75

UR - https://www.scopus.com/pages/publications/33750088182

M3 - Article

SN - 0916-8524

VL - E89-C

SP - 136

EP - 140

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 10

ER -

A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

Keywords

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