A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging

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Abstract

In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.
Original languageEnglish
Title of host publicationProceedings - 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016)
PublisherIEEE
Pages118-121
Number of pages4
ISBN (Electronic)978-1-5090-0484-3
DOIs
Publication statusPublished - 1 Sep 2016
Event2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016 - New Brunswick, NJ, United States
Duration: 25 Sep 201627 Sep 2016

Conference

Conference2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016
Abbreviated titleBCTM
CountryUnited States
CityNew Brunswick, NJ
Period25/09/1627/09/16

Keywords

  • Millimeter IC
  • passive radiometry
  • millimeter-wave
  • low-noise amplifier
  • square-law detector
  • low flicker-noise

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