A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging

E. S. Malotaux; M. Spirito

doi:10.1109/BCTM.2016.7738949

A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging

E. S. Malotaux, M. Spirito

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.

Original language	English
Title of host publication	Proceedings - 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016)
Publisher	IEEE
Pages	118-121
Number of pages	4
ISBN (Electronic)	978-1-5090-0484-3
DOIs	https://doi.org/10.1109/BCTM.2016.7738949
Publication status	Published - 1 Sept 2016
Event	2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016 - New Brunswick, NJ, United States Duration: 25 Sept 2016 → 27 Sept 2016

Conference

Conference	2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016
Abbreviated title	BCTM
Country/Territory	United States
City	New Brunswick, NJ
Period	25/09/16 → 27/09/16

Keywords

Millimeter IC
passive radiometry
millimeter-wave
low-noise amplifier
square-law detector
low flicker-noise

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10.1109/BCTM.2016.7738949

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@inproceedings{2773caa288c34787828a4cb8e6077485,

title = "A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging",

abstract = "In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.",

keywords = "Millimeter IC, passive radiometry, millimeter-wave, low-noise amplifier, square-law detector, low flicker-noise",

author = "Malotaux, {E. S.} and M. Spirito",

year = "2016",

month = sep,

day = "1",

doi = "10.1109/BCTM.2016.7738949",

language = "English",

pages = "118--121",

booktitle = "Proceedings - 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016)",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016, BCTM ; Conference date: 25-09-2016 Through 27-09-2016",

}

Malotaux, ES & Spirito, M 2016, A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging. in Proceedings - 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016). IEEE, pp. 118-121, 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016, New Brunswick, NJ, United States, 25/09/16. https://doi.org/10.1109/BCTM.2016.7738949

TY - GEN

T1 - A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging

AU - Malotaux, E. S.

AU - Spirito, M.

PY - 2016/9/1

Y1 - 2016/9/1

N2 - In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.

AB - In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.

KW - Millimeter IC

KW - passive radiometry

KW - millimeter-wave

KW - low-noise amplifier

KW - square-law detector

KW - low flicker-noise

U2 - 10.1109/BCTM.2016.7738949

DO - 10.1109/BCTM.2016.7738949

M3 - Conference contribution

SP - 118

EP - 121

BT - Proceedings - 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016)

PB - IEEE

T2 - 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2016

Y2 - 25 September 2016 through 27 September 2016

ER -

A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging

Abstract

Conference

Keywords

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