A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface

A Rivera; A van Veen; CV Falub; SWH Eijt; H Schut; JMM de Nijs; P Balk

A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface

A Rivera
, A van Veen
, CV Falub
, SWH Eijt
, H Schut
, JMM de Nijs
, P Balk

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD
Editors	M Hasegawa
Place of Publication	Sendai
Publisher	Tohoku University
Pages	266-283
Number of pages	18
Publication status	Published - 2003
Event	3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan - Sendai Duration: 29 Sept 2002 → 4 Oct 2002

Publication series

Name
Publisher	Tohoku University

Conference

Conference	3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan
Period	29/09/02 → 4/10/02

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

Rivera, A., van Veen, A., Falub, CV., Eijt, SWH., Schut, H., de Nijs, JMM., & Balk, P. (2003). A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface. In M. Hasegawa (Ed.), Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD (pp. 266-283). Tohoku University.

@inproceedings{ce5171cf1dd7487cb3d363dc7c101fdf,

title = "A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "A Rivera and \{van Veen\}, A and CV Falub and SWH Eijt and H Schut and \{de Nijs\}, JMM and P Balk",

year = "2003",

language = "Undefined/Unknown",

publisher = "Tohoku University",

pages = "266--283",

editor = "M Hasegawa",

booktitle = "Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD",

note = "3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan ; Conference date: 29-09-2002 Through 04-10-2002",

}

Rivera, A, van Veen, A, Falub, CV, Eijt, SWH , Schut, H, de Nijs, JMM & Balk, P 2003, A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface. in M Hasegawa (ed.), Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD. Tohoku University, Sendai, pp. 266-283, 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan, 29/09/02.

A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface. / Rivera, A; van Veen, A; Falub, CV et al.
Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD. ed. / M Hasegawa. Sendai: Tohoku University, 2003. p. 266-283.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface

AU - Rivera, A

AU - van Veen, A

AU - Falub, CV

AU - Eijt, SWH

AU - Schut, H

AU - de Nijs, JMM

AU - Balk, P

PY - 2003

Y1 - 2003

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 266

EP - 283

BT - Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD

A2 - Hasegawa, M

PB - Tohoku University

CY - Sendai

T2 - 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan

Y2 - 29 September 2002 through 4 October 2002

ER -

Rivera A, van Veen A, Falub CV, Eijt SWH , Schut H, de Nijs JMM et al. A positron beam 2D-ACAR definitive proof of electric-field-assisted positron drift in SiO2 layers: Application to the study of the Si/SiO2 interface. In Hasegawa M, editor, Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD. Sendai: Tohoku University. 2003. p. 266-283