A Potential-Based Characterization of the Transfer Gate in CMOS Image Sensors

Y Xu; X Ge; AJP Theuwissen

doi:10.1109/TED.2015.2452213

A Potential-Based Characterization of the Transfer Gate in CMOS Image Sensors

Y Xu, X Ge, AJP Theuwissen

Electronic Instrumentation

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Abstract

A method to characterize the transfer gate (TG)- related parameters in a 4 T pixel is presented. The method is based on the pinning voltage measurement, which is proposed by Tan et al.[1] Using this method, the TG ON and OFF surface potential can be characterized. Based on the TG ON potential characterization, and according to the MOSFET model, the TG channel doping and the oxide thickness can be extracted from the measurements. Based on the TG OFF potential characterization, the TG surface potential dependence on the TG design parameters and the pixel biasing condition are analyzed. Using this method, whether the device is suffering from the drain-introduced barrier lowering effect or the short channel effect can be easily determined.

Original language	English
Pages (from-to)	42-48
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	1
DOIs	https://doi.org/10.1109/TED.2015.2452213
Publication status	Published - 28 Jul 2016

Keywords

transfer gate (TG)
CMOS image sensor (CIS)
full well capacity (FWC)
pinning voltage
potential barrier

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10.1109/TED.2015.2452213

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@article{d6237c758f844834aba611fab1be8a9d,

title = "A Potential-Based Characterization of the Transfer Gate in CMOS Image Sensors",

abstract = "A method to characterize the transfer gate (TG)- related parameters in a 4 T pixel is presented. The method is based on the pinning voltage measurement, which is proposed by Tan et al.[1] Using this method, the TG ON and OFF surface potential can be characterized. Based on the TG ON potential characterization, and according to the MOSFET model, the TG channel doping and the oxide thickness can be extracted from the measurements. Based on the TG OFF potential characterization, the TG surface potential dependence on the TG design parameters and the pixel biasing condition are analyzed. Using this method, whether the device is suffering from the drain-introduced barrier lowering effect or the short channel effect can be easily determined.",

keywords = "transfer gate (TG), CMOS image sensor (CIS), full well capacity (FWC), pinning voltage, potential barrier",

author = "Y Xu and X Ge and AJP Theuwissen",

year = "2016",

month = jul,

day = "28",

doi = "10.1109/TED.2015.2452213",

language = "English",

volume = "63",

pages = "42--48",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "1",

}

TY - JOUR

T1 - A Potential-Based Characterization of the Transfer Gate in CMOS Image Sensors

AU - Xu, Y

AU - Ge, X

AU - Theuwissen, AJP

PY - 2016/7/28

Y1 - 2016/7/28

N2 - A method to characterize the transfer gate (TG)- related parameters in a 4 T pixel is presented. The method is based on the pinning voltage measurement, which is proposed by Tan et al.[1] Using this method, the TG ON and OFF surface potential can be characterized. Based on the TG ON potential characterization, and according to the MOSFET model, the TG channel doping and the oxide thickness can be extracted from the measurements. Based on the TG OFF potential characterization, the TG surface potential dependence on the TG design parameters and the pixel biasing condition are analyzed. Using this method, whether the device is suffering from the drain-introduced barrier lowering effect or the short channel effect can be easily determined.

AB - A method to characterize the transfer gate (TG)- related parameters in a 4 T pixel is presented. The method is based on the pinning voltage measurement, which is proposed by Tan et al.[1] Using this method, the TG ON and OFF surface potential can be characterized. Based on the TG ON potential characterization, and according to the MOSFET model, the TG channel doping and the oxide thickness can be extracted from the measurements. Based on the TG OFF potential characterization, the TG surface potential dependence on the TG design parameters and the pixel biasing condition are analyzed. Using this method, whether the device is suffering from the drain-introduced barrier lowering effect or the short channel effect can be easily determined.

KW - transfer gate (TG)

KW - CMOS image sensor (CIS)

KW - full well capacity (FWC)

KW - pinning voltage

KW - potential barrier

U2 - 10.1109/TED.2015.2452213

DO - 10.1109/TED.2015.2452213

M3 - Article

SN - 0018-9383

VL - 63

SP - 42

EP - 48

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

A Potential-Based Characterization of the Transfer Gate in CMOS Image Sensors

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Keywords

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