A Resistor-Based Temperature Sensor With a 0.13 pJ·K² Resolution FoM

Sining Pan, Yanquan Luo, Saleh Heidary Shalmany, Kofi A.A. Makinwa

Research output: Contribution to journalArticleScientificpeer-review

29 Citations (Scopus)
223 Downloads (Pure)

Abstract

This paper describes a high-resolution energy-efficient CMOS temperature sensor, intended for the temperature compensation of MEMS/quartz frequency references. The sensor is based on silicided poly-silicon thermistors, which are embedded in a Wien-bridge RC filter. When driven at a fixed frequency, the filter exhibits a temperature-dependent phase shift, which is digitized by an energy-efficient continuous-time phase-domain delta-sigma modulator. Implemented in a 0.18-μm CMOS technology, the sensor draws 87 μA from a 1.8 V supply and achieves a resolution of 410 μKrms in a 5-ms conversion time. This translates into a state-of-the-art resolution figure-of-merit of 0.13 pJ·K². When packaged in ceramic, the sensor achieves an inaccuracy of 0.2 °C (3σ) from -40 °C to 85 °C after a single-point calibration and a correction for systematic nonlinearity. This can be reduced to ±0.03 °C (3σ) after a first-order fit. In addition, the sensor exhibits low 1/f noise and packaging shift.

Original languageEnglish
Pages (from-to)164-173
Number of pages10
JournalIEEE Journal of Solid State Circuits
Volume53
Issue number1
DOIs
Publication statusPublished - 2018

Keywords

  • Calibration
  • CMOS process
  • CMOS temperature sensor
  • continuous-time phase-domain delta-sigma modulator (PDΔΣM)
  • energy efficiency
  • Energy resolution
  • resistor-based sensor
  • Resistors
  • Signal resolution
  • temperature compensation
  • Temperature dependence
  • Temperature sensors

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