A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

Sining Pan, Yanquan Luo, Saleh Heidary Shalmany, Kofi A.A. Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

10 Citations (Scopus)

Abstract

Temperature sensors are often used for the temperature compensation of frequency references [1-5]. High resolution and energy efficiency are then critical requirements, the former to minimize jitter and the latter to minimize power dissipation in a given conversion time. A MEMS-resonator-based sensor meets both criteria [1], but requires two resonators. In principle, resistor-based sensors also meet these criteria, and are CMOS compatible, but previous designs have been limited by the power dissipation [2-4] or 1/f noise [6] of their readout electronics. This paper describes a CMOS temperature sensor that digitizes the temperature-dependent phase shift of an RC filter. It achieves 410μKrms resolution in a 5ms conversion time, while consuming only 160μW. This corresponds to a resolution FOM of 0.13pJ·K2, a 5× improvement on previous CMOS sensors [6].
Original languageEnglish
Title of host publication2017 IEEE International Solid-State Circuits Conference, ISSCC 2017
Subtitle of host publicationDigest of Technical Papers
EditorsLaura C. Fujino
Place of PublicationDanvers, MA
PublisherIEEE
Pages158-160
Number of pages3
ISBN (Electronic)978-1-5090-3758-2
ISBN (Print)978-1-5090-3757-5
DOIs
Publication statusPublished - 1 Feb 2017
EventISSCC 2017: 64th IEEE International Solid-State Circuits Conference - San Francisco, CA, United States
Duration: 5 Feb 20179 Feb 2017

Conference

ConferenceISSCC 2017
CountryUnited States
CitySan Francisco, CA
Period5/02/179/02/17

Keywords

  • Temperature sensors
  • Bridge circuits
  • Resistors
  • 1/f noise
  • Energy resolution
  • Sensor systems

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