A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 V/ C Offset Drift

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Original language	English
Pages (from-to)	2099-2107
Number of pages	9
Journal	IEEE Journal of Solid State Circuits
Volume	46
Issue number	9
DOIs	https://doi.org/10.1109/JSSC.2011.2139530
Publication status	Published - 2011

Keywords

@article{2bd1ac6908c04aae8ed770762f998da2,

title = "A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 V/ C Offset Drift",

keywords = "CWTS JFIS >= 2.00",

author = "M Bolatkale and MAP Pertijs and WJ Kindt and JH Huijsing and KAA Makinwa",

year = "2011",

doi = "10.1109/JSSC.2011.2139530",

language = "English",

volume = "46",

pages = "2099--2107",

journal = "IEEE Journal of Solid State Circuits",

issn = "0018-9200",

publisher = "IEEE",

number = "9",

}

TY - JOUR

T1 - A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 V/ C Offset Drift

AU - Bolatkale, M

AU - Pertijs, MAP

AU - Kindt, WJ

AU - Huijsing, JH

AU - Makinwa, KAA

PY - 2011

Y1 - 2011

KW - CWTS JFIS >= 2.00

U2 - 10.1109/JSSC.2011.2139530

DO - 10.1109/JSSC.2011.2139530

M3 - Article

SN - 0018-9200

VL - 46

SP - 2099

EP - 2107

JO - IEEE Journal of Solid State Circuits

JF - IEEE Journal of Solid State Circuits

IS - 9

ER -