A single-trim CMOS bandgap reference with a 3-sigma inaccuracy of ±0.15% from ¿40°C to 125°C

G Ge; Ch Zhang; G Hoogzaad; KAA Makinwa

doi:10.1109/ISSCC.2010.5434040

A single-trim CMOS bandgap reference with a 3-sigma inaccuracy of ±0.15% from ¿40°C to 125°C

G Ge, Ch Zhang, G Hoogzaad, KAA Makinwa

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

29 Citations (Scopus)

Original language	English
Title of host publication	2010 IEEE International Solid-State Circuits Conference; Digest of technical papers (ISSCC) 2010
Editors	LC Fujino
Place of Publication	San Franciso, CA, USA
Publisher	IEEE Society
Pages	78-79
Number of pages	2
ISBN (Print)	978-1-4244-6033-5
DOIs	https://doi.org/10.1109/ISSCC.2010.5434040
Publication status	Published - 2010
Event	2010 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA - San Franciso, CA, USA Duration: 7 Feb 2010 → 11 Feb 2010

Publication series

Name
Publisher	IEEE

Name
Volume	53

Conference

Conference	2010 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA
Period	7/02/10 → 11/02/10

Keywords

Geen BTA classificatie

Access to Document

10.1109/ISSCC.2010.5434040

Cite this

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title = "A single-trim CMOS bandgap reference with a 3-sigma inaccuracy of ±0.15% from ¿40°C to 125°C",

keywords = "Geen BTA classificatie",

author = "G Ge and Ch Zhang and G Hoogzaad and KAA Makinwa",

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language = "English",

isbn = "978-1-4244-6033-5",

publisher = "IEEE Society",

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booktitle = "2010 IEEE International Solid-State Circuits Conference; Digest of technical papers (ISSCC) 2010",

note = "2010 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA ; Conference date: 07-02-2010 Through 11-02-2010",

}

Ge, G, Zhang, C, Hoogzaad, G & Makinwa, KAA 2010, A single-trim CMOS bandgap reference with a 3-sigma inaccuracy of ±0.15% from ¿40°C to 125°C. in LC Fujino (ed.), 2010 IEEE International Solid-State Circuits Conference; Digest of technical papers (ISSCC) 2010. IEEE Society, San Franciso, CA, USA, pp. 78-79, 2010 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA, 7/02/10. https://doi.org/10.1109/ISSCC.2010.5434040

A single-trim CMOS bandgap reference with a 3-sigma inaccuracy of ±0.15% from ¿40°C to 125°C. / Ge, G; Zhang, Ch; Hoogzaad, G et al.
2010 IEEE International Solid-State Circuits Conference; Digest of technical papers (ISSCC) 2010. ed. / LC Fujino. San Franciso, CA, USA: IEEE Society, 2010. p. 78-79.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A single-trim CMOS bandgap reference with a 3-sigma inaccuracy of ±0.15% from ¿40°C to 125°C

AU - Ge, G

AU - Zhang, Ch

AU - Hoogzaad, G

AU - Makinwa, KAA

PY - 2010

Y1 - 2010

KW - Geen BTA classificatie

U2 - 10.1109/ISSCC.2010.5434040

DO - 10.1109/ISSCC.2010.5434040

M3 - Conference contribution

SN - 978-1-4244-6033-5

SP - 78

EP - 79

BT - 2010 IEEE International Solid-State Circuits Conference; Digest of technical papers (ISSCC) 2010

A2 - Fujino, LC

PB - IEEE Society

CY - San Franciso, CA, USA

T2 - 2010 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA

Y2 - 7 February 2010 through 11 February 2010

ER -