A study of reactive ion etching damage effects in GaN

B Rong, RJ Reeves, SA Brown, MM Alkaisi, EWJM van der Drift, R Cheung

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	585-595
Number of pages	11
Journal	Microelectronic Engineering
Volume	57-58
Publication status	Published - 2001

Cite this

@article{5432175610d64a6d8d567fbddc6d3510,

title = "A study of reactive ion etching damage effects in GaN",

author = "B Rong and RJ Reeves and SA Brown and MM Alkaisi and {van der Drift}, EWJM and R Cheung",

year = "2001",

language = "Undefined/Unknown",

volume = "57-58",

pages = "585--595",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}