A study of reactive ion etching damage effects in GaN.

B Rong, RJ Reeves, SA Brown, MM Alkaisi, EWJM van der Drift, R Cheung, WG Sloof

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)585-591
Number of pages7
JournalMicroelectronic Engineering
Volume57-58
Publication statusPublished - 2001

Keywords

  • ZX Int.klas.verslagjaar < 2002

Cite this

Rong, B., Reeves, RJ., Brown, SA., Alkaisi, MM., van der Drift, EWJM., Cheung, R., & Sloof, WG. (2001). A study of reactive ion etching damage effects in GaN. Microelectronic Engineering, 57-58, 585-591.