A study of reactive ion etching damage effects in GaN.

B Rong, RJ Reeves, SA Brown, MM Alkaisi, EWJM van der Drift, R Cheung, WG Sloof

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)585-591
Number of pages7
JournalMicroelectronic Engineering
Publication statusPublished - 2001

Bibliographical note

25% FCM, 75% DIMES


  • ZX Int.klas.verslagjaar < 2002

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