INIS
short circuits
100%
mosfet
100%
junctions
100%
simulation
100%
computer-aided design
100%
performance
100%
power
15%
distribution
15%
voltage
15%
devices
15%
increasing
7%
gain
7%
manufacturing
7%
current density
7%
implants
7%
applications
7%
damage
7%
comparative evaluations
7%
silicon
7%
ions
7%
peaks
7%
holes
7%
epitaxy
7%
breakdown
7%
Engineering
Computer Aided Design
100%
Circuit Performance
100%
Short Circuit
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Drain Voltage
7%
Electrical Performance
7%
Limitations
7%
Practical Application
7%
Breakdown Voltage
7%
Fields
7%
Density Distribution
7%
Temperature
7%
Internals
7%
Peak Temperature
7%
Manufacturing Process
7%
Keyphrases
Superjunction MOSFET
100%
P-pillar
100%
Junction Structure
18%
Short-circuit Robustness
18%
Thermal Peak
9%
Hole Current
9%
Short-circuit Capability
9%
MOSFET Device
9%
MOSFET Structure
9%
Implantable Technology
9%
Multi-ion
9%
Material Science
Electronic Circuit
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Temperature
15%
Devices
15%
Silicon
7%
Density
7%