INIS
applications
7%
breakdown
7%
comparative evaluations
7%
computer-aided design
100%
current density
7%
damage
7%
devices
15%
distribution
15%
epitaxy
7%
gain
7%
holes
7%
implants
7%
increasing
7%
ions
7%
junctions
100%
manufacturing
7%
mosfet
100%
peaks
7%
performance
100%
power
15%
short circuits
100%
silicon
7%
simulation
100%
voltage
15%
Engineering
Breakdown Voltage
7%
Circuit Performance
100%
Computer Aided Design
100%
Density Distribution
7%
Drain Voltage
7%
Electrical Performance
7%
Fields
7%
Internals
7%
Limitations
7%
Manufacturing Process
7%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Peak Temperature
7%
Practical Application
7%
Short Circuit
100%
Temperature
7%
Keyphrases
Hole Current
9%
Implantable Technology
9%
Junction Structure
18%
MOSFET Device
9%
MOSFET Structure
9%
Multi-ion
9%
P-pillar
100%
Short-circuit Capability
9%
Short-circuit Robustness
18%
Superjunction MOSFET
100%
Thermal Peak
9%
Material Science
Density
7%
Devices
15%
Electronic Circuit
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Silicon
7%
Temperature
15%