A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors

Sten Vollebregt, B. Alfano, F. Ricciardella, A.J.M. Giesbers, Yelena Grachova, Henk van Zeijl, T Polichetti, Lina Sarro

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

8 Citations (Scopus)

Abstract

In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement of the graphene on the underlying SiO2. Moreover, pre-patterning the Mo layer allows customizable graphene geometries to be directly obtained, something that has never been achieved before. This process is extremely suitable for the large-scale fabrication of MEMS/NEMS sensors, especially those benefitting from specific properties of graphene, such as gas sensing.
Original languageEnglish
Title of host publication2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages17-20
Number of pages4
ISBN (Electronic)978-1-5090-1973-1
DOIs
Publication statusPublished - Jan 2016
EventMEMS 2016: 29th IEEE International Conference on Micro Electro Mechanical Systems - Shanghai, China
Duration: 24 Jan 201628 Jan 2016
Conference number: 29

Conference

ConferenceMEMS 2016
CountryChina
CityShanghai
Period24/01/1628/01/16

Keywords

  • Silicon
  • Graphene
  • Substrates
  • Micromechanical devices
  • Fabrication
  • Wet etching
  • Electrodes

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  • Cite this

    Vollebregt, S., Alfano, B., Ricciardella, F., Giesbers, A. J. M., Grachova, Y., van Zeijl, H., Polichetti, T., & Sarro, L. (2016). A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors. In 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 17-20). IEEE. https://doi.org/10.1109/MEMSYS.2016.7421546