Abstract
In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement of the graphene on the underlying SiO2. Moreover, pre-patterning the Mo layer allows customizable graphene geometries to be directly obtained, something that has never been achieved before. This process is extremely suitable for the large-scale fabrication of MEMS/NEMS sensors, especially those benefitting from specific properties of graphene, such as gas sensing.
Original language | English |
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Title of host publication | 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS) |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 17-20 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-5090-1973-1 |
DOIs | |
Publication status | Published - Jan 2016 |
Event | MEMS 2016: 29th IEEE International Conference on Micro Electro Mechanical Systems - Shanghai, China Duration: 24 Jan 2016 → 28 Jan 2016 Conference number: 29 |
Conference
Conference | MEMS 2016 |
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Country/Territory | China |
City | Shanghai |
Period | 24/01/16 → 28/01/16 |
Keywords
- Silicon
- Graphene
- Substrates
- Micromechanical devices
- Fabrication
- Wet etching
- Electrodes