A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

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Abstract

SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.
Original languageEnglish
Title of host publicationProceedings - 2021 IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021
Place of PublicationPiscataway
PublisherIEEE
Pages39-45
Number of pages7
ISBN (Electronic)978-1-7281-5660-6
ISBN (Print)978-1-7281-5661-3
DOIs
Publication statusPublished - 2021
Event2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)
- The Silesian University of Technology, Online Conference/Gliwice, Poland
Duration: 25 Apr 202129 Apr 2021

Publication series

NameProceedings - 2021 IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021

Conference

Conference2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)
Abbreviated titlePEMC 2021
CountryPoland
CityOnline Conference/Gliwice
Period25/04/2129/04/21

Bibliographical note

Accepted author manuscript

Keywords

  • Driving Transformer
  • MOSFETs in Series
  • Negative Off Voltage
  • SiC MOSFETs

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