A Uni¿ed Aging Model of NBTI and HCI Degradation towards Lifetime Reliability Management for Nanoscale MOSFET Circuits

Y Wang, SD Cotofana, Liang Fang

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

47 Citations (Scopus)
Original languageEnglish
Title of host publication2011 IEEE/ACM International Symposium on Nanoscale Architectures
EditorsCA Moritz, I O'Connor
Place of PublicationPiscataway, NJ, USA
PublisherIEEE Society
Pages175-180
Number of pages6
ISBN (Print)978-1-4577-0995-1
DOIs
Publication statusPublished - 2011
EventNANOARCH 2011 - Piscataway, NJ, USA
Duration: 8 Jun 20119 Jun 2011

Publication series

Name
PublisherIEEE

Conference

ConferenceNANOARCH 2011
Period8/06/119/06/11

Keywords

  • Elektrotechniek
  • Techniek
  • Conf.proc. > 3 pag

Cite this

Wang, Y., Cotofana, SD., & Fang, L. (2011). A Uni¿ed Aging Model of NBTI and HCI Degradation towards Lifetime Reliability Management for Nanoscale MOSFET Circuits. In CA. Moritz, & I. O'Connor (Eds.), 2011 IEEE/ACM International Symposium on Nanoscale Architectures (pp. 175-180). IEEE Society. https://doi.org/10.1109/NANOARCH.2011.5941501