Accelerated resistance degradation in aluminum by pulsed power cycling

A Ferrara; J Claes; M Swanenberg; L van Dijk; PG Steeneken

Accelerated resistance degradation in aluminum by pulsed power cycling

A Ferrara, J Claes, M Swanenberg, L van Dijk, PG Steeneken

QN/Steeneken Lab

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Title of host publication	Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015
Editors	G Ghione
Place of Publication	Piscataway
Publisher	The Inst. of Electrical and Electric Engineers
Pages	301-304
Number of pages	4
ISBN (Print)	0018-9383
Publication status	Published - 2015
Event	The 27th International Symposium on Power Semiconductor Devices and ICs - Piscataway Duration: 10 May 2015 → 14 May 2015

Publication series

Name
Publisher	The Inst. of Electrical and Electric Engineers

Conference

Conference	The 27th International Symposium on Power Semiconductor Devices and ICs
Period	10/05/15 → 14/05/15

Cite this

@inproceedings{927bb1b41a844973bc2ecc979472549a,

title = "Accelerated resistance degradation in aluminum by pulsed power cycling",

author = "A Ferrara and J Claes and M Swanenberg and {van Dijk}, L and PG Steeneken",

year = "2015",

language = "English",

isbn = "0018-9383",

publisher = "The Inst. of Electrical and Electric Engineers",

pages = "301--304",

editor = "G Ghione",

booktitle = "Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015",

note = "The 27th International Symposium on Power Semiconductor Devices and ICs ; Conference date: 10-05-2015 Through 14-05-2015",

}

Ferrara, A, Claes, J, Swanenberg, M, van Dijk, L & Steeneken, PG 2015, Accelerated resistance degradation in aluminum by pulsed power cycling. in G Ghione (ed.), Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015. The Inst. of Electrical and Electric Engineers, Piscataway, pp. 301-304, The 27th International Symposium on Power Semiconductor Devices and ICs, 10/05/15.

Accelerated resistance degradation in aluminum by pulsed power cycling. / Ferrara, A; Claes, J; Swanenberg, M et al.
Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015. ed. / G Ghione. Piscataway: The Inst. of Electrical and Electric Engineers, 2015. p. 301-304.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Accelerated resistance degradation in aluminum by pulsed power cycling

AU - Ferrara, A

AU - Claes, J

AU - Swanenberg, M

AU - van Dijk, L

AU - Steeneken, PG

PY - 2015

Y1 - 2015

M3 - Conference contribution

SN - 0018-9383

SP - 301

EP - 304

BT - Proc. IEEE Int. Symp. Power Semiconductor Devices ISPSD 2015

A2 - Ghione, G

PB - The Inst. of Electrical and Electric Engineers

CY - Piscataway

T2 - The 27th International Symposium on Power Semiconductor Devices and ICs

Y2 - 10 May 2015 through 14 May 2015

ER -