Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoO_x hole collector layer via tailoring (i)a-Si:H/MoO_x interface

Thin films of transition metal oxides such as molybdenum oxide (MoO_x) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoO_x layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoO_x layer quality is the interface between the MoO_x and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoO_x by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoO_x hole collector. With this approach, we can thin down the MoO_x thickness to 1.7 nm and demonstrate short-circuit current density well above 40 mA/cm² and a champion device exhibiting 23.83% conversion efficiency.