Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications

Aniello  Franzese; Batuhan Sutbas; Thomas  Mausolf; Nicolò  Moroni; Renato  Negra; Alfredo Sánchez  Ramos; Francesco Greco; Luigi  Boccia; Ehsan Shokrolahzade; Marco Spirito; Corrado  Carta

doi:10.23919/EuMIC61603.2024.10732437

Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications

Aniello Franzese, Batuhan Sutbas, Thomas Mausolf, Nicolò Moroni, Renato Negra, Alfredo Sánchez Ramos, Francesco Greco, Luigi Boccia, Ehsan Shokrolahzade, Marco Spirito, Corrado Carta

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

This work describes accurate methods for the characterization of sub-terahertz (sub-THz) devices and pad de-embedding procedures. The extraction of the intrinsic DUT is enabled by generating a precise pad model using two-tier calibration approaches. Moreover, the proposed approaches offer a solution to the designers to preserve precious silicon area by presenting a simplified and potentially parameterizable pad model. Employing two different thru-reflect-line (TRL) calibration kits (calKits) together with the DUT on the same die, this research validates the proposed calibration strategies. This paper uses as DUT at J-band, i.e. a Marchand balun, fabricated using IHP SiGe BiCMOS technology with an aluminum back-end-of-line (BEOL), alongside the mentioned calKits. The goal of the paper is to assess the performance of the DUT and validate two de-embedding methods. Moreover, the pad model offers a way for accurate DUT characterization saving silicon area for future optimized designs.

Original language	English
Title of host publication	Proceedings of the 2024 19th European Microwave Integrated Circuits Conference (EuMIC)
Publisher	IEEE
Pages	428-431
Number of pages	4
ISBN (Electronic)	978-2-87487-078-1
ISBN (Print)	979-8-3503-8512-0
DOIs	https://doi.org/10.23919/EuMIC61603.2024.10732437
Publication status	Published - 2024
Event	2024 19th European Microwave Integrated Circuits Conference (EuMIC) - Paris, France Duration: 23 Sept 2024 → 24 Sept 2024 Conference number: 19th

Conference

Conference	2024 19th European Microwave Integrated Circuits Conference (EuMIC)
Country/Territory	France
City	Paris
Period	23/09/24 → 24/09/24

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

6G
balun
characterization
J-band
sub-THz
TRL

Access to Document

10.23919/EuMIC61603.2024.10732437

Cite this

Franzese, A., Sutbas, B., Mausolf, T., Moroni, N., Negra, R., Ramos, A. S., Greco, F., Boccia, L., Shokrolahzade, E., Spirito, M., & Carta, C. (2024). Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications. In Proceedings of the 2024 19th European Microwave Integrated Circuits Conference (EuMIC) (pp. 428-431). IEEE. https://doi.org/10.23919/EuMIC61603.2024.10732437

@inproceedings{ef9a5ceb4cb341cb9ba0b7e9bb362af0,

title = "Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications",

abstract = "This work describes accurate methods for the characterization of sub-terahertz (sub-THz) devices and pad de-embedding procedures. The extraction of the intrinsic DUT is enabled by generating a precise pad model using two-tier calibration approaches. Moreover, the proposed approaches offer a solution to the designers to preserve precious silicon area by presenting a simplified and potentially parameterizable pad model. Employing two different thru-reflect-line (TRL) calibration kits (calKits) together with the DUT on the same die, this research validates the proposed calibration strategies. This paper uses as DUT at J-band, i.e. a Marchand balun, fabricated using IHP SiGe BiCMOS technology with an aluminum back-end-of-line (BEOL), alongside the mentioned calKits. The goal of the paper is to assess the performance of the DUT and validate two de-embedding methods. Moreover, the pad model offers a way for accurate DUT characterization saving silicon area for future optimized designs.",

keywords = "6G, balun, characterization, J-band, sub-THz, TRL",

author = "Aniello Franzese and Batuhan Sutbas and Thomas Mausolf and Nicol{\`o} Moroni and Renato Negra and Ramos, {Alfredo S{\'a}nchez} and Francesco Greco and Luigi Boccia and Ehsan Shokrolahzade and Marco Spirito and Corrado Carta",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2024 19th European Microwave Integrated Circuits Conference (EuMIC) ; Conference date: 23-09-2024 Through 24-09-2024",

year = "2024",

doi = "10.23919/EuMIC61603.2024.10732437",

language = "English",

isbn = "979-8-3503-8512-0",

pages = "428--431",

booktitle = "Proceedings of the 2024 19th European Microwave Integrated Circuits Conference (EuMIC)",

publisher = "IEEE",

address = "United States",

}

Franzese, A, Sutbas, B, Mausolf, T, Moroni, N, Negra, R, Ramos, AS, Greco, F, Boccia, L, Shokrolahzade, E , Spirito, M & Carta, C 2024, Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications. in Proceedings of the 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, pp. 428-431, 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23/09/24. https://doi.org/10.23919/EuMIC61603.2024.10732437

Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications. / Franzese, Aniello ; Sutbas, Batuhan; Mausolf, Thomas et al.
Proceedings of the 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2024. p. 428-431.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications

AU - Franzese, Aniello

AU - Sutbas, Batuhan

AU - Mausolf, Thomas

AU - Moroni, Nicolò

AU - Negra, Renato

AU - Ramos, Alfredo Sánchez

AU - Greco, Francesco

AU - Boccia, Luigi

AU - Shokrolahzade, Ehsan

AU - Spirito, Marco

AU - Carta, Corrado

N1 - Conference code: 19th

PY - 2024

Y1 - 2024

N2 - This work describes accurate methods for the characterization of sub-terahertz (sub-THz) devices and pad de-embedding procedures. The extraction of the intrinsic DUT is enabled by generating a precise pad model using two-tier calibration approaches. Moreover, the proposed approaches offer a solution to the designers to preserve precious silicon area by presenting a simplified and potentially parameterizable pad model. Employing two different thru-reflect-line (TRL) calibration kits (calKits) together with the DUT on the same die, this research validates the proposed calibration strategies. This paper uses as DUT at J-band, i.e. a Marchand balun, fabricated using IHP SiGe BiCMOS technology with an aluminum back-end-of-line (BEOL), alongside the mentioned calKits. The goal of the paper is to assess the performance of the DUT and validate two de-embedding methods. Moreover, the pad model offers a way for accurate DUT characterization saving silicon area for future optimized designs.

AB - This work describes accurate methods for the characterization of sub-terahertz (sub-THz) devices and pad de-embedding procedures. The extraction of the intrinsic DUT is enabled by generating a precise pad model using two-tier calibration approaches. Moreover, the proposed approaches offer a solution to the designers to preserve precious silicon area by presenting a simplified and potentially parameterizable pad model. Employing two different thru-reflect-line (TRL) calibration kits (calKits) together with the DUT on the same die, this research validates the proposed calibration strategies. This paper uses as DUT at J-band, i.e. a Marchand balun, fabricated using IHP SiGe BiCMOS technology with an aluminum back-end-of-line (BEOL), alongside the mentioned calKits. The goal of the paper is to assess the performance of the DUT and validate two de-embedding methods. Moreover, the pad model offers a way for accurate DUT characterization saving silicon area for future optimized designs.

KW - 6G

KW - balun

KW - characterization

KW - J-band

KW - sub-THz

KW - TRL

UR - http://www.scopus.com/inward/record.url?scp=85210892070&partnerID=8YFLogxK

U2 - 10.23919/EuMIC61603.2024.10732437

DO - 10.23919/EuMIC61603.2024.10732437

M3 - Conference contribution

SN - 979-8-3503-8512-0

SP - 428

EP - 431

BT - Proceedings of the 2024 19th European Microwave Integrated Circuits Conference (EuMIC)

PB - IEEE

T2 - 2024 19th European Microwave Integrated Circuits Conference (EuMIC)

Y2 - 23 September 2024 through 24 September 2024

ER -

Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications

Abstract

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Embargoed Document

Fingerprint

Cite this