AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications

Research output: ThesisDissertation (TU Delft)

5 Downloads (Pure)

Abstract

The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases.
Original languageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • Delft University of Technology
Supervisors/Advisors
  • Zhang, G.Q., Supervisor
Award date10 Dec 2019
Print ISBNs978-94-028-1851-2
DOIs
Publication statusPublished - 2019

Keywords

  • AlGaN/GaN
  • HEMT
  • gas sensor
  • gate recess
  • 2DEG
  • H2S
  • H2

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