AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications

Robert Sokolovskij

doi:10.4233/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc

AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications

Robert Sokolovskij

Electronic Components, Technology and Materials

Research output: Thesis › Dissertation (TU Delft)

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Abstract

The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases.

Original language	English
Qualification	Doctor of Philosophy
Awarding Institution	Delft University of Technology
Supervisors/Advisors	Zhang, G.Q., Supervisor
Award date	10 Dec 2019
Print ISBNs	978-94-028-1851-2
DOIs	https://doi.org/10.4233/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc
Publication status	Published - 2019

Keywords

AlGaN/GaN
HEMT
gas sensor
gate recess
2DEG
H2S
H2

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10.4233/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc

Sokolovskij_GaN_sens_dissertation_V2Final published version, 22 MB

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title = "AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications",

abstract = "The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases.",

keywords = "AlGaN/GaN, HEMT, gas sensor, gate recess, 2DEG, H2S, H2",

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AU - Sokolovskij, Robert

PY - 2019

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N2 - The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases.

AB - The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring pollution of our surrounding environment and exposure to toxic, corrosive or flammable gases.

KW - AlGaN/GaN

KW - HEMT

KW - gas sensor

KW - gate recess

KW - 2DEG

KW - H2S

KW - H2

U2 - 10.4233/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc

DO - 10.4233/uuid:856522dc-528d-4ac6-95f7-d44fb8791ddc

M3 - Dissertation (TU Delft)

SN - 978-94-028-1851-2

ER -

AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications

Abstract

Keywords

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