TY - JOUR
T1 - All-printed thin-film transistors from networks of liquid-exfoliated nanosheets
AU - Kelly, Adam G.
AU - Hallam, Toby
AU - Backes, Claudia
AU - Harvey, Andrew
AU - Esmaeily, Amir Sajad
AU - Godwin, Ian
AU - Coelho, João
AU - Nicolosi, Valeria
AU - Lauth, Jannika
AU - Kulkarni, Aditya
AU - Kinge, Sachin
AU - Siebbeles, Laurens D.A.
AU - Duesberg, Georg S.
AU - Coleman, Jonathan N.
PY - 2017/4/7
Y1 - 2017/4/7
N2 - All-printed transistors consisting of interconnected networks of various types of twodimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks.The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on:off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of >0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages.
AB - All-printed transistors consisting of interconnected networks of various types of twodimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks.The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on:off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of >0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages.
UR - http://www.scopus.com/inward/record.url?scp=85017338402&partnerID=8YFLogxK
U2 - 10.1126/science.aal4062
DO - 10.1126/science.aal4062
M3 - Article
AN - SCOPUS:85017338402
SN - 0036-8075
VL - 356
SP - 69
EP - 73
JO - Science
JF - Science
IS - 6333
ER -