All-printed thin-film transistors from networks of liquid-exfoliated nanosheets

Adam G. Kelly, Toby Hallam, Claudia Backes, Andrew Harvey, Amir Sajad Esmaeily, Ian Godwin, João Coelho, Valeria Nicolosi, Jannika Lauth, Aditya Kulkarni, Sachin Kinge, Laurens D.A. Siebbeles, Georg S. Duesberg, Jonathan N. Coleman*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

256 Citations (Scopus)

Abstract

All-printed transistors consisting of interconnected networks of various types of twodimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks.The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on:off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of >0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages.

Original languageEnglish
Pages (from-to)69-73
Number of pages5
JournalScience
Volume356
Issue number6333
DOIs
Publication statusPublished - 7 Apr 2017

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