All-thermal transistor based on stochastic switching

Rafael Sánchez, Holger Thierschmann, Laurens W. Molenkamp

    Research output: Contribution to journalArticleScientificpeer-review

    36 Citations (Scopus)
    23 Downloads (Pure)

    Abstract

    Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two-terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor, hence achieving huge amplification factors. Nonthermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption.

    Original languageEnglish
    Article number241401
    Number of pages5
    JournalPhysical Review B (Condensed Matter and Materials Physics)
    Volume95
    Issue number24
    DOIs
    Publication statusPublished - 1 Jun 2017

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