Al/Si contacting of ultra-shallow epitaxially grown SI and SiGe junctions

Q Ren, LK Nanver, CCG Visser, JW Slotboom

Research output: Contribution to journal › Article › Scientific

Original language	Undefined/Unknown
Pages (from-to)	313-316
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	12
Publication status	Published - 2001

Keywords

@article{17f248570103404eaf9a317c054f3532,

title = "Al/Si contacting of ultra-shallow epitaxially grown SI and SiGe junctions",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "Q Ren and LK Nanver and CCG Visser and JW Slotboom",

year = "2001",

language = "Undefined/Unknown",

volume = "12",

pages = "313--316",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer",

}

TY - JOUR

T1 - Al/Si contacting of ultra-shallow epitaxially grown SI and SiGe junctions

AU - Ren, Q

AU - Nanver, LK

AU - Visser, CCG

AU - Slotboom, JW

PY - 2001

Y1 - 2001

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 0957-4522

VL - 12

SP - 313

EP - 316

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

ER -