INIS
aluminium oxides
100%
layers
100%
thin films
100%
aluminum
100%
precursor
100%
deposition
100%
plasma
27%
growth
27%
water
27%
atmospheric pressure
27%
nanoparticles
18%
films
18%
cost
18%
oxidizing agents
9%
surfaces
9%
oxygen
9%
roughness
9%
carbon
9%
ozone
9%
applications
9%
range
9%
metals
9%
thermal waters
9%
transmission electron microscopy
9%
titanium oxides
9%
density
9%
safety
9%
alkoxides
9%
xps
9%
detection limits
9%
Material Science
Water
100%
Thin Films
100%
Aluminum
100%
Aluminum Oxide
100%
Al2O3
75%
Growth Rate
50%
Silica Nanoparticle
25%
Film
25%
Density
25%
Surface Roughness
25%
Titanium Dioxide
25%
Metal
25%
Transmission Electron Microscopy
25%
Surface
25%
Nanoparticle
25%
Characterization
25%
Electron Microscopy
25%
Engineering
Thin Films
100%
Aluminum Oxide
100%
Atomic Layer Deposition
100%
Water
42%
Atmospheric Pressure
42%
Growth Rate
28%
Cycles
28%
Application
14%
Film Density
14%
Silica Nanoparticle
14%
Roughness
14%
Detection Limit
14%
Metal Precursor
14%
Film Property
14%
Deposition System
14%
Growth Mode
14%
Nanoparticle
14%
Accident Prevention
14%
Transmissions
14%
Plasma Process
14%
Process Water
14%
Nanoparticle Surface
14%
Keyphrases
Aluminum Oxide Film
100%
Aluminum Tri-isopropoxide
100%
Alternative Precursor
100%
Metal Precursor
20%
Thermal Atomic Layer Deposition
20%
Vacuum Pressure
20%
Residual Carbon
20%
Film Roughness
20%
Water Plasma
20%