Abstract
This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.
Original language | English |
---|---|
Title of host publication | Proceeding of IEEE-APEC' 2018 |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 913-918 |
Number of pages | 6 |
ISBN (Electronic) | 978-1-5386-1180-7 |
DOIs | |
Publication status | Published - 2018 |
Event | APEC 2018: 33rd Annual IEEE Applied Power Conference and Exposition - San Antonio, TX, United States Duration: 4 Mar 2018 → 8 Mar 2018 Conference number: 33 http://www.apec-conf.org |
Conference
Conference | APEC 2018 |
---|---|
Country/Territory | United States |
City | San Antonio, TX |
Period | 4/03/18 → 8/03/18 |
Internet address |
Keywords
- GaN eHEMTs
- turn-on
- power loss model