An analytical turn-on power loss model for 650-V GaN eHEMTs

Yanfeng Shen, Huai Wang, Zhan Shen, Frede Blaabjerg, Zian Qin

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

8 Citations (Scopus)


This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.
Original languageEnglish
Title of host publicationProceeding of IEEE-APEC' 2018
Place of PublicationPiscataway, NJ
Number of pages6
ISBN (Electronic)978-1-5386-1180-7
Publication statusPublished - 2018
EventAPEC 2018: 33rd Annual IEEE Applied Power Conference and Exposition - San Antonio, TX, United States
Duration: 4 Mar 20188 Mar 2018
Conference number: 33


ConferenceAPEC 2018
Country/TerritoryUnited States
CitySan Antonio, TX
Internet address


  • GaN eHEMTs
  • turn-on
  • power loss model


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