An analytical turn-on power loss model for 650-V GaN eHEMTs

Yanfeng Shen; Huai  Wang; Zhan Shen; Frede Blaabjerg; Zian Qin

doi:10.1109/APEC.2018.8341123

An analytical turn-on power loss model for 650-V GaN eHEMTs

Yanfeng Shen, Huai Wang, Zhan Shen, Frede Blaabjerg, Zian Qin

DC systems, Energy conversion & Storage

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

11 Citations (SciVal)

Abstract

This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

Original language	English
Title of host publication	Proceeding of IEEE-APEC' 2018
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	913-918
Number of pages	6
ISBN (Electronic)	978-1-5386-1180-7
DOIs	https://doi.org/10.1109/APEC.2018.8341123
Publication status	Published - 2018
Event	APEC 2018: 33rd Annual IEEE Applied Power Conference and Exposition - San Antonio, TX, United States Duration: 4 Mar 2018 → 8 Mar 2018 Conference number: 33 http://www.apec-conf.org

Conference

Conference	APEC 2018
Country/Territory	United States
City	San Antonio, TX
Period	4/03/18 → 8/03/18
Internet address	http://www.apec-conf.org

Keywords

GaN eHEMTs
turn-on
power loss model

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10.1109/APEC.2018.8341123

Cite this

@inproceedings{468be05e63394a22ae03e0bb431e756c,

title = "An analytical turn-on power loss model for 650-V GaN eHEMTs",

abstract = "This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.",

keywords = "GaN eHEMTs, turn-on, power loss model",

author = "Yanfeng Shen and Huai Wang and Zhan Shen and Frede Blaabjerg and Zian Qin",

year = "2018",

doi = "10.1109/APEC.2018.8341123",

language = "English",

pages = "913--918",

booktitle = "Proceeding of IEEE-APEC' 2018",

publisher = "IEEE",

address = "United States",

note = "APEC 2018 : 33rd Annual IEEE Applied Power Conference and Exposition ; Conference date: 04-03-2018 Through 08-03-2018",

url = "http://www.apec-conf.org",

}

TY - GEN

T1 - An analytical turn-on power loss model for 650-V GaN eHEMTs

AU - Shen, Yanfeng

AU - Wang, Huai

AU - Shen, Zhan

AU - Blaabjerg, Frede

AU - Qin, Zian

N1 - Conference code: 33

PY - 2018

Y1 - 2018

N2 - This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

AB - This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

KW - GaN eHEMTs

KW - turn-on

KW - power loss model

U2 - 10.1109/APEC.2018.8341123

DO - 10.1109/APEC.2018.8341123

M3 - Conference contribution

SP - 913

EP - 918

BT - Proceeding of IEEE-APEC' 2018

PB - IEEE

CY - Piscataway, NJ

T2 - APEC 2018

Y2 - 4 March 2018 through 8 March 2018

ER -

An analytical turn-on power loss model for 650-V GaN eHEMTs

Abstract

Conference

Keywords

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