An Oxide Electrothermal Filter in Standard CMOS

Lorenzo Pedalà, Uğur Sonmez, Fabio Sebastiano, Kofi A.A. Makinwa, Krishnaswamy Nagaraj, Joonsung Park

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from -40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.
Original languageEnglish
Title of host publication2016 IEEE Sensors Proceedings
EditorsE. Fontana, C. Ruiz-Zamarreno
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages343-345
Number of pages3
ISBN (Electronic)978-1-4799-8287-5
DOIs
Publication statusPublished - 2016
EventIEEE Sensors 2016: 15th IEEE Sensors Conference - Caribe Royale All-Suite Hotel and Convention Center, Orlando, FL, United States
Duration: 30 Oct 20162 Nov 2016
Conference number: 15

Conference

ConferenceIEEE Sensors 2016
CountryUnited States
CityOrlando, FL
Period30/10/162/11/16

Keywords

  • phase domain sigma delta ADC
  • electrothermal filter
  • thermal diffusivity
  • self-referenced
  • temperature sensor

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