Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors

G Lorito; LK Nanver

Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors

G Lorito, LK Nanver

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Editors	s.n.
Place of Publication	Veldhoven, The Netherlands
Publisher	s.l.
Pages	534-537
Number of pages	4
ISBN (Print)	90-73461-44-8
Publication status	Published - 2006
Event	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors - Veldhoven, The Netherlands Duration: 23 Nov 2006 → 24 Nov 2006

Publication series

Name
Publisher	s.l.

Conference

Conference	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Period	23/11/06 → 24/11/06

Keywords

Elektrotechniek
Techniek
conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{98b6abb5668d4153a7c5a161e58e56ad,

title = "Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors",

keywords = "Elektrotechniek, Techniek, conference contrib. refereed, Conf.proc. > 3 pag",

author = "G Lorito and LK Nanver",

year = "2006",

language = "Undefined/Unknown",

isbn = "90-73461-44-8",

publisher = "s.l.",

pages = "534--537",

editor = "s.n.",

booktitle = "Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

note = "9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors ; Conference date: 23-11-2006 Through 24-11-2006",

}

Lorito, G & Nanver, LK 2006, Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors. in s.n. (ed.), Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. s.l., Veldhoven, The Netherlands, pp. 534-537, 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 23/11/06.

Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors. / Lorito, G; Nanver, LK.
Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. ed. / s.n. Veldhoven, The Netherlands: s.l., 2006. p. 534-537.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors

AU - Lorito, G

AU - Nanver, LK

PY - 2006

Y1 - 2006

KW - Elektrotechniek

KW - Techniek

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 90-73461-44-8

SP - 534

EP - 537

BT - Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

A2 - s.n., null

PB - s.l.

CY - Veldhoven, The Netherlands

T2 - 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

Y2 - 23 November 2006 through 24 November 2006

ER -