Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs

B Svilicic, V Jovanovic, T Suligoj

Research output: Contribution to journal › Article › Scientific › peer-review

44 Citations (Scopus)

Keywords

@article{51be26aa9b414bfaa9c9ca59a22de314,

title = "Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs",

keywords = "Elektrotechniek, Techniek, CWTS JFIS < 0.75",

author = "B Svilicic and V Jovanovic and T Suligoj",

year = "2009",

doi = "10.1016/j.sse.2009.03.002",

language = "Undefined/Unknown",

volume = "53",

pages = "540--547",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs

AU - Svilicic, B

AU - Jovanovic, V

AU - Suligoj, T

PY - 2009

Y1 - 2009

KW - Elektrotechniek

KW - Techniek

KW - CWTS JFIS < 0.75

U2 - 10.1016/j.sse.2009.03.002

DO - 10.1016/j.sse.2009.03.002

M3 - Article

SN - 0038-1101

VL - 53

SP - 540

EP - 547

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -