Analyzing the defect states in a-Si:H with charge deep-level transient spectroscopy and the defect-pool model

JJG van Heuvel, M Zeman, JW Metselaar

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientific

Original languageUndefined/Unknown
Title of host publicationProceedings of the 10th workshop on circuits, systems and signal processing and the 2nd workshop on semiconductor advances for future electronics
Editors JP Veen
Place of PublicationUtrecht
PublisherSTW Technology Foundation
Pages193-198
Number of pages6
ISBN (Print)90-73461-18-9
Publication statusPublished - 1999
EventProRISC'99/SAFE'99, Mierlo - Utrecht
Duration: 25 Nov 199926 Nov 1999

Publication series

Name
PublisherSTW technology foundation

Conference

ConferenceProRISC'99/SAFE'99, Mierlo
Period25/11/9926/11/99

Keywords

  • ZX Int.klas.verslagjaar < 2002

Cite this

van Heuvel, JJG., Zeman, M., & Metselaar, JW. (1999). Analyzing the defect states in a-Si:H with charge deep-level transient spectroscopy and the defect-pool model. In JP Veen (Ed.), Proceedings of the 10th workshop on circuits, systems and signal processing and the 2nd workshop on semiconductor advances for future electronics (pp. 193-198). STW Technology Foundation.