Abstract
The current rating of SiC MOSFETs has been increased ever since its introduction. Yet, high current modules for 690-V and beyond grid applications, which would enable the realization of megawatt range converters, are not readily commercially available. Recently, a new high current 1.7-kV SiC MOSFET module suitable for hard-parallel connection to increase the current rating has been introduced. This paper investigates the system-level benefit of this module for a 2-level 690-V 1-MW grid-tied converter regarding achievable efficiency and power density and benchmarks the results against the achievable performance with conventional Si IGBTs. The study analyzes in detail the impact of the number of paralleled modules, the choice of the cooling system and the filter design.
| Original language | English |
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| Title of host publication | 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) |
| Publisher | IEEE |
| Pages | 127-133 |
| Number of pages | 7 |
| ISBN (Electronic) | 978-89-5708-313-0 |
| ISBN (Print) | 978-1-7281-1612-9 |
| Publication status | Published - 2019 |
| Event | 10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia: 10th International Conference on Power Electronics - Busan, Korea, Republic of Duration: 27 May 2019 → 30 May 2019 Conference number: 10th |
Conference
| Conference | 10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia |
|---|---|
| Country/Territory | Korea, Republic of |
| City | Busan |
| Period | 27/05/19 → 30/05/19 |
Keywords
- Cooling
- Grid-tied converter
- Paralleling
- SiC MOSFET