Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget

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Abstract

This paper shows the application of carrier-selective passivating contacts (CSPCs) in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets. From lifetime analysis of our poly-Si and a-Si:H CSPCs, three FBC and one IBC architectures are devised to progressively increase efficiency (ç) and achieve record short-circuit current density (JSC): (i) a poly-poly cell (\eta = 19.6%); (ii) a selective emitter structure known as PeRFeCT (Passivated Emitter Rear and Front ConTacts, \eta = 20.0%); (iii) a so-called hybrid solar cell with poly-Si and a-Si:H CSPCs at rear and front, respectively (\eta = 21.0%); and (iv) an IBC solar cell with poly-Si CSPC (\eta = 23.0%, JSC = 42.2 mA/cm2).

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
EditorsAlex Freundlich, Marko Topic, Akira Yamada
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages3908-3913
Number of pages6
ISBN (Electronic)978-1-5386-8529-7
ISBN (Print)978-1-5386-8530-3
DOIs
Publication statusPublished - 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period10/06/1815/06/18
Other (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

Keywords

  • C-Si wafer-based solar cells
  • front surface field passivation
  • ion implantation
  • poly-Si passivating contacts
  • short circuit current density

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