Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry.

ZX Jiang, S Backer, JJ Lee, LY Wu, T Guenther, D Sieloff, P Choi, M Foisy, PFA Alkemade

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	1133-1137
Number of pages	5
Journal	Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
Publication status	Published - 2000

Keywords

@article{9d8e1ae4cc5c4ba38605e1936e97a052,

title = "Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "ZX Jiang and S Backer and JJ Lee and LY Wu and T Guenther and D Sieloff and P Choi and M Foisy and PFA Alkemade",

year = "2000",

language = "Undefined/Unknown",

volume = "19",

pages = "1133--1137",

journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry.

AU - Jiang, ZX

AU - Backer, S

AU - Lee, JJ

AU - Wu, LY

AU - Guenther, T

AU - Sieloff, D

AU - Choi, P

AU - Foisy, M

AU - Alkemade, PFA

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 1071-1023

VL - 19

SP - 1133

EP - 1137

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

IS - 4

ER -