Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

A Sakic, TLM Scholtes, WB De Boer, N Golshani, J Derakhshandeh, LK Nanver

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	2092-2107
Number of pages	16
Journal	Journal of Electronic Materials
Volume	4
Issue number	12
Publication status	Published - 2011

Keywords

@article{da56d6b8e80043d3a007728470c9b69e,

title = "Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes",

keywords = "academic journal papers, CWTS JFIS < 0.75",

author = "A Sakic and TLM Scholtes and {De Boer}, WB and N Golshani and J Derakhshandeh and LK Nanver",

year = "2011",

language = "English",

volume = "4",

pages = "2092--2107",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer Science+Business Media",

number = "12",

}

TY - JOUR

T1 - Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

AU - Sakic, A

AU - Scholtes, TLM

AU - De Boer, WB

AU - Golshani, N

AU - Derakhshandeh, J

AU - Nanver, LK

PY - 2011

Y1 - 2011

KW - academic journal papers

KW - CWTS JFIS < 0.75

UR - http://www.mdpi.com/1996-1944/4/12/2092/pdf

M3 - Article

VL - 4

SP - 2092

EP - 2107

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -