Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

A Sakic, TLM Scholtes, WB De Boer, N Golshani, J Derakhshandeh, LK Nanver

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)2092-2107
Number of pages16
JournalJournal of Electronic Materials
Issue number12
Publication statusPublished - 2011


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