TY - JOUR
T1 - Attojoule Superconducting Thermal Logic and Memories
AU - Wang, H.
AU - Noordzij, N.
AU - Mykhaylov, M.
AU - Steinhauer, Stephan
AU - Descamps, Thomas
AU - Oksenberg, Eitan
AU - Zwiller, Val
AU - Esmaeil Zadeh, I.Z.
PY - 2025
Y1 - 2025
N2 - Due to stringent thermal budgets in cryogenic technologies such as superconducting quantum computers and sensors, electronic building blocks that simultaneously offer low energy consumption, fast switching, low error rates, a small footprint, and simple fabrication are pivotal for large-scale devices. Here, we demonstrate a superconducting switch with attojoule switching energy, high speed (pico-second rise/fall times), and high integration density (on the order of 10
-2 μm
2 per switch). It consists of a superconducting nanochannel and a metal heater separated by an insulating silica layer. We experimentally demonstrate digital gate operations utilizing these nanostructures, such as NOT, NAND, NOR, AND, and OR gates, with a few femtojoules of energy consumption and ultralow bit error rates <10
-8. In addition, we build energy-efficient volatile memory elements with nanosecond operation speeds and a retention time over 10
5 s. These superconducting switches open new possibilities for increasing the size and complexity of modern cryogenic technologies.
AB - Due to stringent thermal budgets in cryogenic technologies such as superconducting quantum computers and sensors, electronic building blocks that simultaneously offer low energy consumption, fast switching, low error rates, a small footprint, and simple fabrication are pivotal for large-scale devices. Here, we demonstrate a superconducting switch with attojoule switching energy, high speed (pico-second rise/fall times), and high integration density (on the order of 10
-2 μm
2 per switch). It consists of a superconducting nanochannel and a metal heater separated by an insulating silica layer. We experimentally demonstrate digital gate operations utilizing these nanostructures, such as NOT, NAND, NOR, AND, and OR gates, with a few femtojoules of energy consumption and ultralow bit error rates <10
-8. In addition, we build energy-efficient volatile memory elements with nanosecond operation speeds and a retention time over 10
5 s. These superconducting switches open new possibilities for increasing the size and complexity of modern cryogenic technologies.
KW - Superconducting device
KW - logic gate
KW - memory device
KW - digital circuits
UR - http://www.scopus.com/inward/record.url?scp=86000633545&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.4c06545
DO - 10.1021/acs.nanolett.4c06545
M3 - Article
SN - 1530-6984
VL - 25
SP - 4401
EP - 4407
JO - Nano Letters
JF - Nano Letters
IS - 11
ER -