Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates

Wenmao Li, Jian Zhang, Robert Sokolovskij, Yumeng Zhu, Yongle Qi, Xinpeng Lin, Jingyi Wu, Lingli Jiang, Hongyu Yu

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

Ohmic contacts to AlGaN/GaN with different metal stacks on Si or Sapphire substrate are fabricated and compared in this paper. For Au-capped ohmic contacts, the lowest contact resistances of 0.7 Ω·mm and 1.3 Ω·mm are achieved by Ti/Al/Ti/Au (20/110/40/50 nm) and Ti/Al/Ni/Au (20/110/40/50 nm) stacks, respectively. It also shows that the substrate material and epitaxial structure play an important role in ohmic contact engineering. For CMOS compatible Au-free structures, the Ti/Al/W (20/100/30 nm), Ti/Al/Ni/W (20/100/20/10 nm) and (20/100/10/20 nm) are demonstrated with the minimum contact resistance values of 0.45, 1.3, and 1.6 Ω·mm, respectively. The three metal stacks of Au-free ohmic contact are compared and obtained results are explained.

Original languageEnglish
Title of host publication2018 18th International Workshop on Junction Technology, IWJT-2018
Subtitle of host publicationExtended Abstracts
EditorsYu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1-4
Number of pages4
Volume2018-January
ISBN (Electronic)978-1-5386-4513-0
ISBN (Print)978-1-5386-4511-6
DOIs
Publication statusPublished - 2018
Event18th International Workshop on Junction Technology, IWJT 2018 - Shanghai, China
Duration: 8 Mar 20189 Mar 2018

Conference

Conference18th International Workshop on Junction Technology, IWJT 2018
CountryChina
CityShanghai
Period8/03/189/03/18

Keywords

  • Ohmic contacts
  • Annealing
  • Metals
  • Contact resistance
  • Substrates
  • Silicon
  • Gallium nitride

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