Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)

Vahid Mohammadi; Stoyan Nihtianov; Changming Fang

doi:10.1038/s41598-021-99821-9

Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)

Vahid Mohammadi^*, Stoyan Nihtianov, Changming Fang

^*Corresponding author for this work

Electronic Instrumentation

Research output: Contribution to journal › Comment/Letter to the editor › Scientific › peer-review

30 Downloads (Pure)

Abstract

Original language	English
Article number	20579
Journal	Scientific Reports
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41598-021-99821-9
Publication status	Published - 2021

Access to Document

10.1038/s41598-021-99821-9

s41598-021-99821-9Final published version, 742 KBLicence: CC BY

Cite this

@article{0df044d9bb334859b678714f00dd4cbf,

title = "Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)",

author = "Vahid Mohammadi and Stoyan Nihtianov and Changming Fang",

year = "2021",

doi = "10.1038/s41598-021-99821-9",

language = "English",

volume = "11",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature",

number = "1",

}

Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0). / Mohammadi, Vahid; Nihtianov, Stoyan; Fang, Changming.
In: Scientific Reports, Vol. 11, No. 1, 20579, 2021.

Research output: Contribution to journal › Comment/Letter to the editor › Scientific › peer-review

TY - JOUR

T1 - Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)

AU - Mohammadi, Vahid

AU - Nihtianov, Stoyan

AU - Fang, Changming

PY - 2021

Y1 - 2021

UR - http://www.scopus.com/inward/record.url?scp=85117366535&partnerID=8YFLogxK

U2 - 10.1038/s41598-021-99821-9

DO - 10.1038/s41598-021-99821-9

M3 - Comment/Letter to the editor

AN - SCOPUS:85117366535

SN - 2045-2322

VL - 11

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 20579

ER -

Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)

Abstract

Access to Document

Other files and links

Research output

A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer

Cite this