Base resistance distribution in bipolar transistors, relevance to compact noise modeling and extraction from admittance parameters

F Vitale; R Pijper; R van der Toorn

doi:10.1109/BIPOL.2010.5667931

Base resistance distribution in bipolar transistors, relevance to compact noise modeling and extraction from admittance parameters

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

4 Citations (Scopus)

Original language	English
Title of host publication	Proceedings BCTM 2010
Editors	D Ngo, A Joseph
Place of Publication	Los Alamitos, CA, USA
Publisher	IEEE
Pages	161-164
Number of pages	4
ISBN (Print)	978-1-4244-8578-9
DOIs	https://doi.org/10.1109/BIPOL.2010.5667931
Publication status	Published - 2010
Event	2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Austin, USA - Los Alamitos, CA, USA Duration: 4 Oct 2010 → 6 Oct 2010

Publication series

Name
Publisher	IEEE

Conference

Conference	2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Austin, USA
Period	4/10/10 → 6/10/10

Keywords

Conf.proc. > 3 pag

Access to Document

10.1109/BIPOL.2010.5667931

Cite this

@inproceedings{9af1336185974ac1a7a15a8fbee57051,

title = "Base resistance distribution in bipolar transistors, relevance to compact noise modeling and extraction from admittance parameters",

keywords = "Conf.proc. > 3 pag",

author = "F Vitale and R Pijper and {van der Toorn}, R",

year = "2010",

doi = "10.1109/BIPOL.2010.5667931",

language = "English",

isbn = "978-1-4244-8578-9",

publisher = "IEEE",

pages = "161--164",

editor = "D Ngo and A Joseph",

booktitle = "Proceedings BCTM 2010",

address = "United States",

note = "2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Austin, USA ; Conference date: 04-10-2010 Through 06-10-2010",

}

Vitale, F, Pijper, R & van der Toorn, R 2010, Base resistance distribution in bipolar transistors, relevance to compact noise modeling and extraction from admittance parameters. in D Ngo & A Joseph (eds), Proceedings BCTM 2010. IEEE, Los Alamitos, CA, USA, pp. 161-164, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Austin, USA, 4/10/10. https://doi.org/10.1109/BIPOL.2010.5667931

Base resistance distribution in bipolar transistors, relevance to compact noise modeling and extraction from admittance parameters. / Vitale, F; Pijper, R; van der Toorn, R.
Proceedings BCTM 2010. ed. / D Ngo; A Joseph. Los Alamitos, CA, USA: IEEE, 2010. p. 161-164.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Base resistance distribution in bipolar transistors, relevance to compact noise modeling and extraction from admittance parameters

AU - Vitale, F

AU - Pijper, R

AU - van der Toorn, R

PY - 2010

Y1 - 2010

KW - Conf.proc. > 3 pag

U2 - 10.1109/BIPOL.2010.5667931

DO - 10.1109/BIPOL.2010.5667931

M3 - Conference contribution

SN - 978-1-4244-8578-9

SP - 161

EP - 164

BT - Proceedings BCTM 2010

A2 - Ngo, D

A2 - Joseph, A

PB - IEEE

CY - Los Alamitos, CA, USA

T2 - 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Austin, USA

Y2 - 4 October 2010 through 6 October 2010

ER -