BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies

M. Alonso Del Pino; D Cavallo; H. Thippur Shivamurthy; H Gao; M Spirito

doi:10.1109/IRMMW-THz.2015.7327937

BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies

M. Alonso Del Pino, D Cavallo, H. Thippur Shivamurthy, H Gao, M Spirito

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

61 Downloads (Pure)

Abstract

This contribution presents the development of an integrated power combiner in Bi-CMOS technology employing artificial dielectric layers (ADLs) at submillimeter wave frequencies. The power is gathered from frequency multiplier chains into a single waveguide which is loaded with ADL in order to reduce the structure footprint.

Original language	English
Title of host publication	Proceedings of the 40th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz
Editors	XC Zhang, W Lu
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	1-2
Number of pages	2
ISBN (Print)	978-1-4799-8272-1
DOIs	https://doi.org/10.1109/IRMMW-THz.2015.7327937
Publication status	Published - 12 Nov 2015
Event	IRMMW-THz 2015, Hong Kong, China - Piscataway Duration: 23 Aug 2015 → 28 Aug 2015

Publication series

Name
Publisher	IEEE

Conference

Conference	IRMMW-THz 2015, Hong Kong, China
Period	23/08/15 → 28/08/15

Keywords

Metals
Power combiners
BiCMOS integrated circuits
Permittivity
Dielectrics
Silicon germanium
Pins

Access to Document

10.1109/IRMMW-THz.2015.7327937

Cite this

@inproceedings{cbc29a9410a742cd9d39c23f1245afeb,

title = "BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies",

abstract = "This contribution presents the development of an integrated power combiner in Bi-CMOS technology employing artificial dielectric layers (ADLs) at submillimeter wave frequencies. The power is gathered from frequency multiplier chains into a single waveguide which is loaded with ADL in order to reduce the structure footprint.",

keywords = "Metals, Power combiners, BiCMOS integrated circuits, Permittivity, Dielectrics, Silicon germanium, Pins",

author = "{Alonso Del Pino}, M. and D Cavallo and {Thippur Shivamurthy}, H. and H Gao and M Spirito",

year = "2015",

month = nov,

day = "12",

doi = "10.1109/IRMMW-THz.2015.7327937",

language = "English",

isbn = "978-1-4799-8272-1",

publisher = "IEEE",

pages = "1--2",

editor = "XC Zhang and W Lu",

booktitle = "Proceedings of the 40th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz",

address = "United States",

note = "IRMMW-THz 2015, Hong Kong, China ; Conference date: 23-08-2015 Through 28-08-2015",

}

Alonso Del Pino, M , Cavallo, D, Thippur Shivamurthy, H, Gao, H & Spirito, M 2015, BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies. in XC Zhang & W Lu (eds), Proceedings of the 40th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz. IEEE, Piscataway, NJ, USA, pp. 1-2, IRMMW-THz 2015, Hong Kong, China, 23/08/15. https://doi.org/10.1109/IRMMW-THz.2015.7327937

BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies. / Alonso Del Pino, M.; Cavallo, D; Thippur Shivamurthy, H. et al.
Proceedings of the 40th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz. ed. / XC Zhang; W Lu. Piscataway, NJ, USA: IEEE, 2015. p. 1-2.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies

AU - Alonso Del Pino, M.

AU - Cavallo, D

AU - Thippur Shivamurthy, H.

AU - Gao, H

AU - Spirito, M

PY - 2015/11/12

Y1 - 2015/11/12

N2 - This contribution presents the development of an integrated power combiner in Bi-CMOS technology employing artificial dielectric layers (ADLs) at submillimeter wave frequencies. The power is gathered from frequency multiplier chains into a single waveguide which is loaded with ADL in order to reduce the structure footprint.

AB - This contribution presents the development of an integrated power combiner in Bi-CMOS technology employing artificial dielectric layers (ADLs) at submillimeter wave frequencies. The power is gathered from frequency multiplier chains into a single waveguide which is loaded with ADL in order to reduce the structure footprint.

KW - Metals

KW - Power combiners

KW - BiCMOS integrated circuits

KW - Permittivity

KW - Dielectrics

KW - Silicon germanium

KW - Pins

U2 - 10.1109/IRMMW-THz.2015.7327937

DO - 10.1109/IRMMW-THz.2015.7327937

M3 - Conference contribution

SN - 978-1-4799-8272-1

SP - 1

EP - 2

BT - Proceedings of the 40th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz

A2 - Zhang, XC

A2 - Lu, W

PB - IEEE

CY - Piscataway, NJ, USA

T2 - IRMMW-THz 2015, Hong Kong, China

Y2 - 23 August 2015 through 28 August 2015

ER -

BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Cite this