BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies

M. Alonso Del Pino, D Cavallo, H. Thippur Shivamurthy, H Gao, M Spirito

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)
55 Downloads (Pure)

Abstract

This contribution presents the development of an integrated power combiner in Bi-CMOS technology employing artificial dielectric layers (ADLs) at submillimeter wave frequencies. The power is gathered from frequency multiplier chains into a single waveguide which is loaded with ADL in order to reduce the structure footprint.
Original languageEnglish
Title of host publicationProceedings of the 40th International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz
EditorsXC Zhang, W Lu
Place of PublicationPiscataway, NJ, USA
PublisherIEEE Society
Pages1-2
Number of pages2
ISBN (Print)978-1-4799-8272-1
DOIs
Publication statusPublished - 12 Nov 2015
EventIRMMW-THz 2015, Hong Kong, China - Piscataway
Duration: 23 Aug 201528 Aug 2015

Publication series

Name
PublisherIEEE

Conference

ConferenceIRMMW-THz 2015, Hong Kong, China
Period23/08/1528/08/15

Keywords

  • Metals
  • Power combiners
  • BiCMOS integrated circuits
  • Permittivity
  • Dielectrics
  • Silicon germanium
  • Pins

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