BTI analysis of SRAM write driver

IO Agbo, M Taouil, S Hamdioui, P Weckx, S Cosemans, F Catthoor

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

6 Citations (Scopus)

Abstract

Bias Temperature Instability (BTI) has become a major reliability challenge for nano-scaled devices. This paper presents BTI analysis for the SRAM write driver. Its evaluation metric, the write delay (WD), is analyzed for various supply voltages and temperatures for three technology nodes, i.e., 45nm, 32nm, and 22nm. The results show that as technology scales down, BTI impact on write delay (i.e., its average and +/- 3σ variations) increases; the 22nm design can degrade up to 1.9x more than the 45nm design at nominal operation conditions. In addition, the result shows that an increment in supply voltage (i.e., from -10% Vdd to +10% Vdd) increases the relative write delay during the operational lifetime. Furthermore, the results show that a temperature increment accelerates the BTI induced write delay significantly; while at 298K the degradation is up to 4.7%, it increases to 41.4% at 398K for the 22nm technology node.
Original languageEnglish
Title of host publicationProceedings of the 10th International Design and Test Symposium, IDT 2015
EditorsF Kurdahi, S Mir, MO Yu
Place of PublicationPiscataway
PublisherIEEE Society
Pages100-105
Number of pages6
ISBN (Print)978-1-4673-9993-4
DOIs
Publication statusPublished - 2015
EventIDT 2015: 10th International Design and Test Symposium - Amman, Jordan
Duration: 14 Dec 201516 Dec 2015
Conference number: 10

Conference

ConferenceIDT 2015
CountryJordan
CityAmman
Period14/12/1516/12/15

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