Buffer layers for superconducting YBaCuO thin films on silicon and SiO2

R. De Reus*, F. W. Saris, G. J. van der Kolk, C. Witmer, B. Dam, D. H.A. Blank, D. J. Adelerhof, J. Flokstra

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)


By direct deposition onto hot substrates, using laser ablation, crystalline YBa2Cu3O7-δ (123) was obtained at 650°C on SiO2, but not on (100) Si substrates. The 123 film did not show a superconducting transition due to interfacial reactions. The failure temperature of insulating buffer layers, such as tantalum oxide and hafnium oxide, is around 500 °C. Although MgO and BaZrO3 show a high stability in contact with 123 at 900 °C, they fail as a diffusion barrier at much lower temperatures. Below 400 °C barium diffuses through MgO, which itself remains unaffected. Using BaZrO3 the same happens around 700 °C. BaF2 fails as a diffusion barrier below 400 °C. Using laser ablation, high quality 123 films were grown on ZrO2 buffer layers above 650 °C. For the first time we report superconducting transitions of 123 deposited at 650 °C onto an amorphous metal alloy, Ir45Ta55. The problems encountered using conducting buffer layers are either a low reaction temperature with 123 (HfB2 and HfN) or oxidation of the metal alloy (Ir45Ta55) around 400 °C. Intermediate noble metal layers silver and Ag/Au/Ag could not prevent oxygen diffusion towards the underlying buffer layer.

Original languageEnglish
Pages (from-to)135-147
Number of pages13
JournalMaterials Science and Engineering B
Issue number1-2
Publication statusPublished - Sept 1990

Bibliographical note

Funding Information:
We would like to thank A. C. Moleman, W. Moolhuyzen(U niversityo f Amsterdam)a,n d C. Langereis( Philips,E indhoven)fo r their assis-tancew ith the XRD measurementWs.e acknowledge W. A. M. Aarnink and G. Gerritsma (Universityo f Twente)f or their valuables ugges-tions and analysiso f the Si/NiSi2/ZrO2/123sa m-ple structuresA. lso, we gratefullya cknowledgTe. S. Bailer (Philips, Eindhoven),w ho participated in the experimentws ith the Ir-Ta buffer layer. This work is part of the researchp rogramo f the Stichting voor FundamenteeOl nderzoek der Materie (Foundationf or FundamentaRl esearch on Matter) and was financiallys upportedb y the NederlandseO rganisatiev oor Wetenschappelijk Onderzoek( NetherlandOs rganizationfo r Scientific Research) and the Stichting Technische Wetenschappe(nN etherlandsT echnologyF oun-dation).


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