Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

V Jovanovic; LK Nanver; T Suligoj; M Poljak

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

V Jovanovic, LK Nanver, T Suligoj, M Poljak

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proc. of the 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009)
Editors	D Tsoukalas, A Dimoulas
Place of Publication	Athens, Greece
Publisher	IEEE
Pages	241-244
Number of pages	4
Publication status	Published - 2009
Event	39th IEEE European Solid-State Device Research Conference (ESSDERC 2009) - Athens, Greece Duration: 14 Sept 2009 → 18 Sept 2009

Publication series

Name
Publisher	IEEE

Conference

Conference	39th IEEE European Solid-State Device Research Conference (ESSDERC 2009)
Period	14/09/09 → 18/09/09

Keywords

Conf.proc. > 3 pag

Cite this

@inproceedings{d3f7a7a54659441599c97791ffa31ac1,

title = "Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices",

keywords = "Conf.proc. > 3 pag",

author = "V Jovanovic and LK Nanver and T Suligoj and M Poljak",

year = "2009",

language = "Undefined/Unknown",

publisher = "IEEE",

pages = "241--244",

editor = "D Tsoukalas and A Dimoulas",

booktitle = "Proc. of the 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009)",

address = "United States",

note = "39th IEEE European Solid-State Device Research Conference (ESSDERC 2009) ; Conference date: 14-09-2009 Through 18-09-2009",

}

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices. / Jovanovic, V; Nanver, LK; Suligoj, T et al.
Proc. of the 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009). ed. / D Tsoukalas; A Dimoulas. Athens, Greece: IEEE, 2009. p. 241-244.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

AU - Jovanovic, V

AU - Nanver, LK

AU - Suligoj, T

AU - Poljak, M

PY - 2009

Y1 - 2009

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 241

EP - 244

BT - Proc. of the 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009)

A2 - Tsoukalas, D

A2 - Dimoulas, A

PB - IEEE

CY - Athens, Greece

T2 - 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009)

Y2 - 14 September 2009 through 18 September 2009

ER -