C-V Characterization of MOS capacitators on high resistivity silicon substrate

B Rong, LK Nanver, JN Burghartz, ABM Jansman, B Rejaei Salmassi, AGR Evans

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	Proceedings of ESSCIRC-ESSDERC 2003
Editors	s.n.
Place of Publication	s.l.
Publisher	Frontier/Seguier Atlantica
Pages	1-4
Number of pages	4
Publication status	Published - 2003
Event	European Solid-State Devices Research Conference, Lisboa/Estoril, Portugal - s.l. Duration: 15 Sept 2003 → 19 Sept 2003

Name
Publisher	Frontier/Seguier Atlantica

Conference	European Solid-State Devices Research Conference, Lisboa/Estoril, Portugal
Period	15/09/03 → 19/09/03

Keywords

@inproceedings{3580f175b6ad4302ad668f1bdf71b371,

title = "C-V Characterization of MOS capacitators on high resistivity silicon substrate",

keywords = "Conf.proc. > 3 pag",

author = "B Rong and LK Nanver and JN Burghartz and ABM Jansman and {Rejaei Salmassi}, B and AGR Evans",

year = "2003",

language = "Undefined/Unknown",

publisher = "Frontier/Seguier Atlantica",

pages = "1--4",

editor = "s.n.",

booktitle = "Proceedings of ESSCIRC-ESSDERC 2003",

note = "European Solid-State Devices Research Conference, Lisboa/Estoril, Portugal ; Conference date: 15-09-2003 Through 19-09-2003",

}

TY - GEN

T1 - C-V Characterization of MOS capacitators on high resistivity silicon substrate

AU - Rong, B

AU - Nanver, LK

AU - Burghartz, JN

AU - Jansman, ABM

AU - Rejaei Salmassi, B

AU - Evans, AGR

PY - 2003

Y1 - 2003

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 1

EP - 4

BT - Proceedings of ESSCIRC-ESSDERC 2003

A2 - s.n., null

PB - Frontier/Seguier Atlantica

CY - s.l.

T2 - European Solid-State Devices Research Conference, Lisboa/Estoril, Portugal

Y2 - 15 September 2003 through 19 September 2003

ER -