Abstract
In this paper, we present a thru-reflect-line (TRL) calibration/de-embedding kit integrated in the back-end-of-line of a SiGe technology, which allows direct calibration at the first metallization layer, thus moving the reference planes as close as possible to the intrinsic device. The proposed calibration/ de-embedding kit features capacitively loaded inverted CPW lines, allowing to reduce the losses arising from the conducting (i.e., silicon) substrate, by confining the propagating field in the low-loss dielectric layers. The structures have been designed specifically for (sub) mm-wave measurements, as complementary to conventional de-embedding kits used at lower frequencies. A simplified analytical model is presented to support the design of the capacitively loaded CPW lines. Results of a calibration/de-embedding kit, realized using a 130-nm BiCMOS technology are experimentally obtained in the WR-03 waveguide band. Worst case error bounds providing error below 5% in the entire WR3 band are demonstrated. Comparison between direct calibration and de-embedding using calibration transfer from fused silica are provided to highlight the improvements of the proposed approach in the mm-wave bands. Finally, the TRL calibration kit is employed for S-parameter measurements of a heterojunction bipolar transistor and the results are compared to the HiCUM model of the same transistor for verification
Original language | English |
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Pages (from-to) | 4914-4924 |
Number of pages | 11 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 65 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2017 |
Keywords
- Calibration
- Coplanar waveguides
- Dielectrics
- Impedance
- Power transmission lines
- Substrates
- Transmission line measurements
- CPW
- VNA.
- distributed de-embedding
- millimeter waves
- silicon
- slow wave
- thru-reflect line (TRL)